IRL2505SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

500 mJ

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

104A

Current - Continuous Drain (Id) @ 25°C :

104A Tc

Vgs (Max) :

±16V

Additional Feature :

LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

8m Ω @ 54A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

1998

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Number of Elements :

1

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Number of Terminations :

2

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.01Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

ECCN Code :

EAR99

Power Dissipation-Max :

3.8W Ta 200W Tc

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

360A