IRFSL7540PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

160W Tc

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Continuous Drain Current (ID) :

110A

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Number of Channels :

1

Weight :

2.084002g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.7V @ 100μA

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 65A, 10V

Turn-Off Delay Time :

58 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

3

FET Type :

N-Channel

REACH SVHC :

No SVHC

Packaging :

Tube

Fall Time (Typ) :

56 ns

Element Configuration :

Single

Rise Time :

76ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®, StrongIRFET™

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4555pF @ 25V

Threshold Voltage :

3.7V

ECCN Code :

EAR99

Number of Pins :

3

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Mount :

Through Hole

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA