IRFSL7437PBF
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- Mfr.Part #
- IRFSL7437PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 195A TO262
- Stock
- 10,123
- In Stock ：
- 10,123
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 1.8MOhm
- Published :
- 2012
- Drain to Source Breakdown Voltage :
- 40V
- Continuous Drain Current (ID) :
- 195A
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 100A, 10V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 53 ns
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Rise Time :
- 70ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 7330pF @ 25V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 230W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Power Dissipation :
- 230W
- Vgs(th) (Max) @ Id :
- 3.9V @ 150μA
- Series :
- HEXFET®, StrongIRFET™
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Nominal Vgs :
- 3 V
- Packaging :
- Tube
- Number of Terminations :
- 3
- Turn On Delay Time :
- 19 ns
- FET Type :
- N-Channel
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 78 ns
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 802 mJ
- Case Connection :
- DRAIN
- Threshold Voltage :
- 3V
- Datasheets
- IRFSL7437PBF
N-Channel Tube 1.8m Ω @ 100A, 10V ±20V 7330pF @ 25V 225nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL7437PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 802 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 7330pF @ 25V.This device has a continuous drain current (ID) of [195A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 78 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.Its overall power consumption can be reduced by using drive voltage (6V 10V).
IRFSL7437PBF Features
the avalanche energy rating (Eas) is 802 mJ
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 78 ns
a threshold voltage of 3V
IRFSL7437PBF Applications
There are a lot of Infineon Technologies
IRFSL7437PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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