IRFSL7434PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

2.084002g

Series :

HEXFET®, StrongIRFET™

Number of Terminations :

3

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

115 ns

Gate Charge (Qg) (Max) @ Vgs :

324nC @ 10V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

780A

Continuous Drain Current (ID) :

195A

Number of Pins :

3

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation-Max :

294W Tc

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

68ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

10820pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Published :

2004

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Fall Time (Typ) :

68 ns

Vgs (Max) :

±20V

Threshold Voltage :

3V

Turn On Delay Time :

24 ns

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Transistor Application :

SWITCHING

Packaging :

Tube

Drain to Source Breakdown Voltage :

40V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99