IRFSL5615PBF
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- Mfr.Part #
- IRFSL5615PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A TO262
- Stock
- 1,083
- In Stock ：
- 1,083
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Continuous Drain Current (ID) :
- 33A
- Factory Lead Time :
- 12 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Pulsed Drain Current-Max (IDM) :
- 140A
- Packaging :
- Tube
- Turn On Delay Time :
- 8.9 ns
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 17.2 ns
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 109 mJ
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Rise Time :
- 23.1ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 50V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 13.1 ns
- Length :
- 10.668mm
- Power Dissipation :
- 144W
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Height :
- 9.652mm
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Drain-source On Resistance-Max :
- 0.042Ohm
- Width :
- 4.826mm
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Published :
- 2008
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 21A, 10V
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation-Max :
- 144W Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- IRFSL5615PBF
N-Channel Tube 42m Ω @ 21A, 10V ±20V 1750pF @ 50V 40nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL5615PBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 109 mJ.The maximum input capacitance of this device is 1750pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 33A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 17.2 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 140A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8.9 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IRFSL5615PBF Features
the avalanche energy rating (Eas) is 109 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 17.2 ns
based on its rated peak drain current 140A.
IRFSL5615PBF Applications
There are a lot of Infineon Technologies
IRFSL5615PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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