IRFSL4410ZPBF
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- Mfr.Part #
- IRFSL4410ZPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 97A TO262
- Stock
- 23,809
- In Stock ：
- 23,809
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.65mm
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 97A
- Drain to Source Breakdown Voltage :
- 100V
- JESD-609 Code :
- e3
- Width :
- 4.826mm
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 43 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 242 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Fall Time (Typ) :
- 57 ns
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 97A Tc
- Length :
- 10.668mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- HEXFET®
- Rise Time :
- 52ns
- Power Dissipation :
- 230W
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4820pF @ 50V
- Published :
- 2008
- Turn On Delay Time :
- 16 ns
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 58A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.009Ohm
- Power Dissipation-Max :
- 230W Tc
- Terminal Position :
- Single
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- IRFSL4410ZPBF
N-Channel Tube 9m Ω @ 58A, 10V ±20V 4820pF @ 50V 120nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4410ZPBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 242 mJ.A device's maximal input capacitance is 4820pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 97A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 43 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL4410ZPBF Features
the avalanche energy rating (Eas) is 242 mJ
a continuous drain current (ID) of 97A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
IRFSL4410ZPBF Applications
There are a lot of Infineon Technologies
IRFSL4410ZPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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