IRFSL4229PBF
- Mfr.Part #
- IRFSL4229PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 45A TO262
- Stock
- 3,129
- In Stock :
- 3,129
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 48mOhm @ 26A, 10V
- Drain to Source Voltage (Vdss) :
- 250V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4560pF @ 25V
- Supplier Device Package :
- TO-262
- Turn-Off Delay Time :
- 30 ns
- Input Capacitance :
- 4.56nF
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 330W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Rise Time :
- 31ns
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 45A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Series :
- HEXFET®
- Published :
- 2010
- Operating Temperature :
- -40°C~175°C TJ
- Mount :
- Through Hole
- Width :
- 4.826mm
- Drain to Source Breakdown Voltage :
- 250V
- Rds On Max :
- 48 mΩ
- Turn On Delay Time :
- 18 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 330W
- Max Operating Temperature :
- 175°C
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Mounting Type :
- Through Hole
- Min Operating Temperature :
- -40°C
- Packaging :
- Tube
- Drain to Source Resistance :
- 48mOhm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Fall Time (Typ) :
- 21 ns
- Vgs (Max) :
- ±30V
- Height :
- 9.65mm
- Length :
- 10.668mm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Datasheets
- IRFSL4229PBF

N-Channel Tube 48mOhm @ 26A, 10V ±30V 4560pF @ 25V 110nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4229PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4560pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 45A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 48mOhm.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFSL4229PBF Features
a continuous drain current (ID) of 45A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 48mOhm
a 250V drain to source voltage (Vdss)
IRFSL4229PBF Applications
There are a lot of Infineon Technologies
IRFSL4229PBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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