IRFSL4127PBF
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- Mfr.Part #
- IRFSL4127PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 72A TO262
- Stock
- 1,607
- In Stock ：
- 1,607
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rise Time :
- 18ns
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Length :
- 10.668mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Turn On Delay Time :
- 17 ns
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 56 ns
- Transistor Application :
- SWITCHING
- Height :
- 9.652mm
- Fall Time (Typ) :
- 22 ns
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 375W Tc
- FET Type :
- N-Channel
- Resistance :
- 22mOhm
- Continuous Drain Current (ID) :
- 72A
- Power Dissipation :
- 375W
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 44A, 10V
- Width :
- 4.826mm
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5380pF @ 50V
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Datasheets
- IRFSL4127PBF
N-Channel Tube 22m Ω @ 44A, 10V 5380pF @ 50V 150nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4127PBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 5380pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 72A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 56 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.
IRFSL4127PBF Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 56 ns
IRFSL4127PBF Applications
There are a lot of Infineon Technologies
IRFSL4127PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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