IRFSL4010PBF
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- Mfr.Part #
- IRFSL4010PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 180A TO262
- Stock
- 1,628
- In Stock ：
- 1,628
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 4.7MOhm
- Series :
- HEXFET®
- Packaging :
- Tube
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Power Dissipation :
- 375W
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 106A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 100 ns
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 375W Tc
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Height :
- 9.65mm
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Width :
- 4.826mm
- Threshold Voltage :
- 4V
- Pulsed Drain Current-Max (IDM) :
- 720A
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 9575pF @ 50V
- Length :
- 10.668mm
- Turn On Delay Time :
- 21 ns
- Fall Time (Typ) :
- 77 ns
- Drain to Source Breakdown Voltage :
- 100V
- Continuous Drain Current (ID) :
- 180A
- Rise Time :
- 86ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Datasheets
- IRFSL4010PBF
N-Channel Tube 4.7m Ω @ 106A, 10V ±20V 9575pF @ 50V 215nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL4010PBF Overview
A device's maximal input capacitance is 9575pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 720A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFSL4010PBF Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 720A.
a threshold voltage of 4V
IRFSL4010PBF Applications
There are a lot of Infineon Technologies
IRFSL4010PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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