IRFSL3307

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Drain Current-Max (Abs) (ID) :

75A

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

75V

Number of Elements :

1

Transistor Application :

SWITCHING

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 150μA

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

130A Tc

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0063Ohm

Surface Mount :

No

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

270 mJ

Terminal Finish :

MATTE TIN OVER NICKEL

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

510A

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

75V

Power Dissipation-Max :

250W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified