IRFSL3306PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

40 ns

Mount :

Through Hole

Vgs (Max) :

±20V

Power Dissipation :

230W

Drain-source On Resistance-Max :

0.0042Ohm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Width :

4.826mm

Published :

2007

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

620A

Rise Time :

76ns

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Element Configuration :

Single

Turn On Delay Time :

15 ns

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tube

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Fall Time (Typ) :

77 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Mounting Type :

Through Hole

Current Rating :

160A

Voltage - Rated DC :

60V

ECCN Code :

EAR99

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Height :

9.65mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 150μA

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current (ID) :

120A

Power Dissipation-Max :

230W Tc