IRFSL3107PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

3m Ω @ 140A, 10V

Number of Elements :

1

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

9370pF @ 50V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

RoHS Status :

ROHS3 Compliant

Width :

4.826mm

Terminal Position :

Single

Turn On Delay Time :

19 ns

Rise Time :

110ns

Vgs (Max) :

±20V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

370W

Length :

10.668mm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation-Max :

370W Tc

Height :

9.65mm

Published :

2005

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

230A

Transistor Application :

SWITCHING

Series :

HEXFET®

FET Type :

N-Channel

Fall Time (Typ) :

100 ns

Turn-Off Delay Time :

99 ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

900A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40