IRFS7762PBF
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- Mfr.Part #
- IRFS7762PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 85A D2PAK
- Stock
- 15,445
- In Stock ：
- 15,445
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Turn On Delay Time :
- 11 ns
- Rise Time :
- 49ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Height :
- 4.83mm
- Power Dissipation :
- 140W
- Rds On (Max) @ Id, Vgs :
- 6.7m Ω @ 51A, 10V
- ECCN Code :
- EAR99
- Published :
- 2006
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Mounting Type :
- Surface Mount
- Weight :
- 3.949996g
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 140W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 85A
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4440pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 40 ns
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3.7V @ 100μA
- Length :
- 10.67mm
- Turn-Off Delay Time :
- 57 ns
- Width :
- 9.65mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 75V
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tube
- Datasheets
- IRFS7762PBF
N-Channel Tube 6.7m Ω @ 51A, 10V ±20V 4440pF @ 25V 130nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7762PBF Overview
A device's maximum input capacitance is 4440pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 85A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 57 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
IRFS7762PBF Features
a continuous drain current (ID) of 85A
the turn-off delay time is 57 ns
a 75V drain to source voltage (Vdss)
IRFS7762PBF Applications
There are a lot of Infineon Technologies
IRFS7762PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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