IRFS7530TRL7PP
- Mfr.Part #
- IRFS7530TRL7PP
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N CH 60V 240A D2PAK
- Stock
- 145,224
- In Stock :
- 145,224
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 375W
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 79 ns
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 7
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Series :
- HEXFET®, StrongIRFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 12960pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Max Junction Temperature (Tj) :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 375W Tc
- Continuous Drain Current (ID) :
- 240A
- Weight :
- 1.59999g
- Threshold Voltage :
- 3.7V
- Number of Channels :
- 1
- Published :
- 2013
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 9.65mm
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Length :
- 10.67mm
- Rise Time :
- 102ns
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.4m Ω @ 100A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 168 ns
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 354nC @ 10V
- Turn On Delay Time :
- 24 ns
- Height :
- 5.084mm
- Factory Lead Time :
- 12 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IRFS7530TRL7PP
IRFS7530TRL7PP Documents

N-Channel Tape & Reel (TR) 1.4m Ω @ 100A, 10V ±20V 12960pF @ 25V 354nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
IRFS7530TRL7PP Description
The IRFS7530TRL7PP is a 60V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET? HEXFET? power MOSFET IRFS7530TRL7PP is suitable for battery-powered circuits, synchronous rectifier applications, and half-bridge, and full-bridge topologies. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRFS7530TRL7PP is in the TO-263-7 package with 375w power dissipation.
IRFS7530TRL7PP Features
-
Improved gate, avalanche, and dynamic dv/dt ruggedness
-
Fully characterized capacitance and avalanche SOA
-
Enhanced body diode dV/dt and dI/dt capability
-
Lead-Free, RoHS Compliant
-
Maximum Power Dissipation: 375w
IRFS7530TRL7PP Applications
-
Brushed Motor drive applications
-
BLDC Motor drive applications
-
Battery-powered circuits
-
Half-bridge and full-bridge topologies
-
Synchronous rectifier applications
-
Resonant mode power supplies
-
OR-ing and redundant power switches
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