IRFS750A
- Mfr.Part #
- IRFS750A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 8.4A TO220F
- Stock
- 269
- In Stock :
- 269
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 49W Tc
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.3Ohm
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 131nC @ 10V
- Number of Terminations :
- 3
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 8.4A
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 400V
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 60A
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 4.2A, 10V
- Avalanche Energy Rating (Eas) :
- 1210 mJ
- DS Breakdown Voltage-Min :
- 400V
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Surface Mount :
- No
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.78pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- IRFS750A

N-Channel Tube 300m Ω @ 4.2A, 10V ±30V 2.78pF @ 25V 131nC @ 10V 400V TO-220-3 Full Pack
IRFS750A Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1210 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.78pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 8.4A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFS750A Features
the avalanche energy rating (Eas) is 1210 mJ
based on its rated peak drain current 60A.
a 400V drain to source voltage (Vdss)
IRFS750A Applications
There are a lot of Rochester Electronics, LLC
IRFS750A applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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