IRFS4620TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

144W Tc

Pulsed Drain Current-Max (IDM) :

100A

Width :

4.826mm

Number of Elements :

1

Turn-Off Delay Time :

25.4 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

200V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Power Dissipation :

144W

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Continuous Drain Current (ID) :

24A

Element Configuration :

Single

Series :

HEXFET®

Rise Time :

22.4ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Number of Terminations :

2

Turn On Delay Time :

13.4 ns

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

77.5m Ω @ 15A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Height :

9.65mm

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 100µA

Published :

2008

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Fall Time (Typ) :

14.8 ns

Mount :

Surface Mount, Through Hole

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0775Ohm