IRFS4615TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Published :

2008

Drain to Source Breakdown Voltage :

150V

Turn On Delay Time :

15 ns

Number of Pins :

3

Element Configuration :

Single

Radiation Hardening :

No

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

25 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Mount :

Surface Mount

Width :

9.65mm

Power Dissipation-Max :

144W Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.042Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rise Time :

35ns

Case Connection :

DRAIN

Length :

10.668mm

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

33A

Height :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

144W

Fall Time (Typ) :

20 ns

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 100µA