IRFS4610PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.668mm

Recovery Time :

53 ns

Series :

HEXFET®

Nominal Vgs :

4 V

Voltage - Rated DC :

100V

Power Dissipation-Max :

190W Tc

Height :

4.826mm

Operating Temperature :

-55°C~175°C TJ

Current Rating :

73A

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

290A

Turn-Off Delay Time :

53 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Dual Supply Voltage :

100V

Fall Time (Typ) :

70 ns

Terminal Form :

Gull wing

Case Connection :

DRAIN

Number of Terminations :

2

Number of Pins :

3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Resistance :

14mOhm

Rise Time :

87ns

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

73A

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

FET Type :

N-Channel

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Power Dissipation :

190W

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Published :

2006

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 100µA

RoHS Status :

RoHS Compliant

Turn On Delay Time :

18 ns