IRFS4610

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

190W Tc

Transistor Application :

SWITCHING

Surface Mount :

yes

Drain-source On Resistance-Max :

0.014Ohm

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

370 mJ

Drain Current-Max (Abs) (ID) :

73A

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 100µA

Case Connection :

DRAIN

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Terminal Position :

Single

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

290A