IRFS4228PBF
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- Mfr.Part #
- IRFS4228PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 83A D2PAK
- Stock
- 12,313
- In Stock ：
- 12,313
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 15 mΩ
- Continuous Drain Current (ID) :
- 83A
- Drain to Source Breakdown Voltage :
- 150V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 4.826mm
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 330W
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Current Rating :
- 83A
- Power Dissipation-Max :
- 330W Tc
- Height :
- 9.65mm
- Radiation Hardening :
- No
- Max Operating Temperature :
- 175°C
- FET Type :
- N-Channel
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Drain to Source Resistance :
- 15mOhm
- Turn On Delay Time :
- 18 ns
- Number of Elements :
- 1
- Min Operating Temperature :
- -40°C
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 33A, 10V
- Turn-Off Delay Time :
- 24 ns
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4530pF @ 25V
- Series :
- HEXFET®
- Length :
- 10.668mm
- Supplier Device Package :
- D2PAK
- Voltage - Rated DC :
- 150V
- Current - Continuous Drain (Id) @ 25°C :
- 83A Tc
- Operating Temperature :
- -40°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Input Capacitance :
- 4.53nF
- Drain to Source Voltage (Vdss) :
- 150V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount, Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRFS4228PBF
N-Channel Tube 15mOhm @ 33A, 10V ±30V 4530pF @ 25V 107nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4228PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4530pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 83A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.This device has a drain-to-source resistance of 15mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFS4228PBF Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 15mOhm
a 150V drain to source voltage (Vdss)
IRFS4228PBF Applications
There are a lot of Infineon Technologies
IRFS4228PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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