IRFS4115TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Power Dissipation :

375W

Input Capacitance (Ciss) (Max) @ Vds :

5270pF @ 50V

Transistor Application :

SWITCHING

Fall Time (Typ) :

39 ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.668mm

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Case Connection :

DRAIN

Width :

9.652mm

Rise Time :

73ns

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

12.1m Ω @ 62A, 10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

99A

Radiation Hardening :

No

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

41 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

150V

Continuous Drain Current (ID) :

195A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±20V

FET Type :

N-Channel

Resistance :

11.8mOhm

Turn On Delay Time :

18 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Factory Lead Time :

12 Weeks

Published :

2011

Series :

HEXFET®

Height :

4.826mm

Power Dissipation-Max :

375W Tc