IRFS4010TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0047Ohm

Number of Elements :

1

Power Dissipation-Max :

375W Tc

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

375W

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

720A

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Published :

2011

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

21 ns

Height :

4.826mm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 106A, 10V

Width :

9.65mm

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

100 ns

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

9575pF @ 50V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Fall Time (Typ) :

77 ns

Length :

10.668mm

Number of Pins :

3

Continuous Drain Current (ID) :

180A

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Rise Time :

86ns

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Number of Terminations :

2

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Transistor Element Material :

SILICON