IRFS3607TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 100µA

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

75V

ECCN Code :

EAR99

Width :

9.65mm

Number of Elements :

1

Continuous Drain Current (ID) :

80A

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.009Ohm

Fall Time (Typ) :

96 ns

Height :

4.826mm

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Case Connection :

DRAIN

Power Dissipation-Max :

140W Tc

Rise Time :

110ns

Length :

10.668mm

Terminal Form :

Gull wing

Turn On Delay Time :

16 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn-Off Delay Time :

43 ns

Qualification Status :

Not Qualified

Published :

2012

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Series :

HEXFET®

Number of Terminations :

2

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Power Dissipation :

140W

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount