IRFS3307ZTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

120A

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

ECCN Code :

EAR99

Series :

HEXFET®

Power Dissipation-Max :

230W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

75V

JESD-609 Code :

e3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

480A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 150μA

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

64ns

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

230W

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Drain-source On Resistance-Max :

0.0058ohm

Number of Terminations :

2

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Vgs (Max) :

±20V

Fall Time (Typ) :

65 ns

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

12 Weeks