IRFS3307ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

65 ns

Number of Terminations :

2

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Mount :

Surface Mount

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

230W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

230W Tc

Width :

9.652mm

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0058ohm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Height :

4.572mm

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

480A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

140 mJ

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

26 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

75V

Length :

10.668mm

Published :

2006

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

120A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn-Off Delay Time :

51 ns

Element Configuration :

Single

Rise Time :

64ns

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs (Max) :

±20V