IRFS3307TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Rise Time :

120ns

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

200W

Mount :

Surface Mount

Mounting Type :

Surface Mount

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

120A

Width :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

63 ns

Drain to Source Breakdown Voltage :

75V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Drain Current-Max (Abs) (ID) :

75A

Turn-Off Delay Time :

51 ns

Resistance :

6.3mOhm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

26 ns

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Vgs(th) (Max) @ Id :

4V @ 150μA

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

270 mJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Length :

10.668mm

Vgs (Max) :

±20V

Power Dissipation-Max :

200W Tc

Packaging :

Tape and Reel (TR)

Number of Pins :

3

ECCN Code :

EAR99

Number of Elements :

1

Factory Lead Time :

15 Weeks

Height :

4.572mm

FET Type :

N-Channel