IRFS3307

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

225

Series :

HEXFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

510A

Terminal Finish :

TIN LEAD

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

270 mJ

DS Breakdown Voltage-Min :

75V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 150μA

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Power Dissipation-Max :

250W Tc

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

75V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

75A

FET Type :

N-Channel

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Published :

2006

Drain-source On Resistance-Max :

0.0063Ohm

ECCN Code :

EAR99

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2