IRFS3207TRLPBF

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Mfr.Part #
IRFS3207TRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 170A D2PAK
Stock
4,028
In Stock :
4,028

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
120ns
ECCN Code :
EAR99
Turn On Delay Time :
29 ns
Height :
4.826mm
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Width :
9.65mm
Voltage - Rated DC :
75V
Continuous Drain Current (ID) :
180A
JESD-30 Code :
R-PSSO-G2
Power Dissipation :
300W
Packaging :
Tape and Reel (TR)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~175°C TJ
Radiation Hardening :
No
Factory Lead Time :
12 Weeks
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
Power Dissipation-Max :
300W Tc
Fall Time (Typ) :
74 ns
Number of Terminations :
2
Vgs (Max) :
±20V
Number of Pins :
3
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 50V
Threshold Voltage :
4V
Pulsed Drain Current-Max (IDM) :
720A
Length :
10.668mm
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
HEXFET®
Drain to Source Breakdown Voltage :
75V
Mount :
Surface Mount
Transistor Element Material :
SILICON
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
75A
JESD-609 Code :
e3
Nominal Vgs :
4 V
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 75A, 10V
Published :
2006
Peak Reflow Temperature (Cel) :
260
Current Rating :
180A
Time@Peak Reflow Temperature-Max (s) :
30
Vgs(th) (Max) @ Id :
4V @ 250µA
Case Connection :
DRAIN
Resistance :
4.5mOhm
Turn-Off Delay Time :
68 ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Mounting Type :
Surface Mount
Number of Elements :
1
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Datasheets
IRFS3207TRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFS3207TRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, IRFS3207TRLPBF pinout, IRFS3207TRLPBF datasheet PDF, IRFS3207TRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFS3207TRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFS3207TRLPBF


N-Channel Tape & Reel (TR) 4.5m Ω @ 75A, 10V ±20V 7600pF @ 50V 260nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS3207TRLPBF Overview


A device's maximum input capacitance is 7600pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 720A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 29 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFS3207TRLPBF Features


a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 720A.
a threshold voltage of 4V


IRFS3207TRLPBF Applications


There are a lot of Infineon Technologies
IRFS3207TRLPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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