IRFS3006TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

118 ns

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 170A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 50V

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

375W Tc

Power Dissipation :

375W

Number of Pins :

3

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

195A

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Rise Time :

182ns

Drain Current-Max (Abs) (ID) :

270A

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Radiation Hardening :

No

Width :

9.65mm

Resistance :

2.5MOhm

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Height :

4.826mm

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Terminal Position :

Single

Mount :

Surface Mount

Fall Time (Typ) :

189 ns

Number of Elements :

1

Turn On Delay Time :

16 ns

Length :

10.668mm

Series :

HEXFET®