IRFS17N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

16A

Series :

HEXFET®

Rise Time :

19ns

Drain to Source Voltage (Vdss) :

200V

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Power Dissipation :

140W

Nominal Vgs :

5.5 V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

170 mΩ

Vgs (Max) :

±30V

Published :

2004

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Input Capacitance :

1.1nF

Rds On (Max) @ Id, Vgs :

170mOhm @ 9.8A, 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Turn-Off Delay Time :

18 ns

Dual Supply Voltage :

200V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Supplier Device Package :

D2PAK

Drain to Source Resistance :

170mOhm

Width :

10.54mm

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Power Dissipation-Max :

3.8W Ta 140W Tc

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Height :

4.69mm

Max Operating Temperature :

175°C

Turn On Delay Time :

11 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Fall Time (Typ) :

6.6 ns

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Current Rating :

16A

Voltage - Rated DC :

200V

Element Configuration :

Single