IRFS17N20D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

240 mJ

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

64A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Drain-source On Resistance-Max :

0.17Ohm

Series :

HEXFET®

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Published :

2000

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

200V

Drain Current-Max (Abs) (ID) :

16A

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Power Dissipation-Max :

3.8W Ta 140W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

170m Ω @ 9.8A, 10V

JESD-30 Code :

R-PSSO-G2