IRFR9120NTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Continuous Drain Current (ID) :

-6.6A

Nominal Vgs :

-4 V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

40W

Recovery Time :

150 ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Length :

6.7056mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

480m Ω @ 3.9A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Threshold Voltage :

-4V

Current Rating :

-6.6A

FET Type :

P-Channel

Termination :

SMD/SMT

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

31 ns

Radiation Hardening :

No

Power Dissipation-Max :

40W Tc

Published :

1998

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Voltage - Rated DC :

-100V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

ECCN Code :

EAR99

Resistance :

480mOhm

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Drain to Source Breakdown Voltage :

-100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Rise Time :

47ns

Turn-Off Delay Time :

28 ns

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

26A

Lead Free :

Contains Lead, Lead Free

Transistor Element Material :

SILICON

Dual Supply Voltage :

100V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Height :

2.3876mm

Vgs (Max) :

±20V