IRFR812TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2004

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

500V

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Resistance :

2.2Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Series :

HEXFET®

Fall Time (Typ) :

17 ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Turn On Delay Time :

14 ns

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Position :

Single

Number of Elements :

1

Rise Time :

22ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-252AA

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Transistor Element Material :

SILICON

Power Dissipation :

78W

Radiation Hardening :

No

JESD-609 Code :

e3

Power Dissipation-Max :

78W Tc

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 2.2A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

3.6A

Turn-Off Delay Time :

24 ns