IRFR6215TRPBF

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Mfr.Part #
IRFR6215TRPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 150V 13A DPAK
Stock
92,922
In Stock :
92,922

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Max Junction Temperature (Tj) :
175°C
Mount :
Surface Mount
Width :
6.22mm
Factory Lead Time :
12 Weeks
Radiation Hardening :
No
Resistance :
295mOhm
Number of Channels :
1
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Drain to Source Voltage (Vdss) :
150V
Continuous Drain Current (ID) :
-13A
Recovery Time :
240 ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Number of Pins :
3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Time@Peak Reflow Temperature-Max (s) :
30
Fall Time (Typ) :
37 ns
JESD-30 Code :
R-PSSO-G2
Drain to Source Breakdown Voltage :
-150V
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
295m Ω @ 6.6A, 10V
Number of Elements :
1
Transistor Application :
SWITCHING
Threshold Voltage :
-4V
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
-150V
Vgs (Max) :
±20V
Case Connection :
DRAIN
Turn-Off Delay Time :
53 ns
Published :
2004
Pulsed Drain Current-Max (IDM) :
44A
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Lead Free :
Contains Lead, Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
860pF @ 25V
Number of Terminations :
2
Dual Supply Voltage :
-150V
Power Dissipation-Max :
110W Tc
Series :
HEXFET®
Height :
2.52mm
JEDEC-95 Code :
TO-252AA
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Power Dissipation :
110W
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
P-Channel
Termination :
SMD/SMT
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Length :
6.7056mm
Turn On Delay Time :
14 ns
Rise Time :
36ns
Nominal Vgs :
-4 V
Current Rating :
-13A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IRFR6215TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR6215TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, IRFR6215TRPBF pinout, IRFR6215TRPBF datasheet PDF, IRFR6215TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFR6215TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFR6215TRPBF


P-Channel Tape & Reel (TR) 295m Ω @ 6.6A, 10V ±20V 860pF @ 25V 66nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR6215TRPBF Description


International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide the lowest on-resistance per silicon area feasible. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer a highly efficient device that can be used in a wide range of applications.

Surface mounting via vapor phase, infrared, or wave soldering processes is possible with the D-PAK. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable. 



IRFR6215TRPBF Features



  • P-Channel

  • 175°C Operating Temperature

  • Surface Mount (IRFR6215)

  • Straight Lead (IRFU6215)

  • Advanced Process Technology

  • Fast Switching

  • Fully Avalanche Rated

  • Lead-Free 



IRFR6215TRPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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