IRFR6215TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

150V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

44A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Published :

1998

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252AA

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

110W Tc

Terminal Position :

Single

Number of Terminations :

2

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

310 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Drain Current-Max (Abs) (ID) :

13A

DS Breakdown Voltage-Min :

150V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.295Ohm