IRFR6215PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

FET Type :

P-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

13A

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

310 mJ

Pulsed Drain Current-Max (IDM) :

44A

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Series :

HEXFET®

Drain-source On Resistance-Max :

0.295Ohm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

150V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Factory Lead Time :

20 Weeks

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

110W Tc

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Drain to Source Voltage (Vdss) :

150V

Published :

2004

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Qualification Status :

Not Qualified