IRFR5505TRPBF
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- Mfr.Part #
- IRFR5505TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 55V 18A DPAK
- Stock
- 76,333
- In Stock ：
- 76,333
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 28ns
- Resistance :
- 110mOhm
- Length :
- 6.7056mm
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 9.6A, 10V
- Number of Elements :
- 1
- Power Dissipation :
- 57W
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Threshold Voltage :
- -4V
- Dual Supply Voltage :
- -55V
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 2.52mm
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 12 Weeks
- Voltage - Rated DC :
- -55V
- Width :
- 6.22mm
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Termination :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- -18A
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Power Dissipation-Max :
- 57W Tc
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Max Junction Temperature (Tj) :
- 150°C
- Pulsed Drain Current-Max (IDM) :
- 64A
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lead Free :
- Contains Lead, Lead Free
- Series :
- HEXFET®
- Fall Time (Typ) :
- 16 ns
- Nominal Vgs :
- -4 V
- Packaging :
- Tape and Reel (TR)
- Recovery Time :
- 77 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Voltage (Vdss) :
- 55V
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 12 ns
- Drain to Source Breakdown Voltage :
- -55V
- Turn-Off Delay Time :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- -18A
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 25V
- Published :
- 1997
- Transistor Application :
- SWITCHING
- Datasheets
- IRFR5505TRPBF
P-Channel Tape & Reel (TR) 110m Ω @ 9.6A, 10V ±20V 650pF @ 25V 32nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5505TRPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 650pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -55V.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 64A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.The transistor must receive a 55V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFR5505TRPBF Features
a continuous drain current (ID) of -18A
a drain-to-source breakdown voltage of -55V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 64A.
a threshold voltage of -4V
a 55V drain to source voltage (Vdss)
IRFR5505TRPBF Applications
There are a lot of Infineon Technologies
IRFR5505TRPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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