IRFR5505PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain-source On Resistance-Max :

0.11Ohm

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

55V

Terminal Position :

Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Published :

1997

Terminal Form :

Gull wing

Number of Elements :

1

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

64A

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

18A Tc

FET Type :

P-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation-Max :

57W Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

DS Breakdown Voltage-Min :

55V

Series :

HEXFET®

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

110m Ω @ 9.6A, 10V

Number of Terminations :

2

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

150 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

18A

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V