IRFR5410TRPBF
- Mfr.Part #
- IRFR5410TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 13A DPAK
- Stock
- 13,310
- In Stock :
- 13,310
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 2.52mm
- Turn-Off Delay Time :
- 45 ns
- Published :
- 1999
- Drain to Source Voltage (Vdss) :
- 100V
- Fall Time (Typ) :
- 46 ns
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 2
- Power Dissipation :
- 66W
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 15 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 66W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- -13A
- Number of Pins :
- 3
- Length :
- 6.7056mm
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Threshold Voltage :
- -4V
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Breakdown Voltage :
- -100V
- Dual Supply Voltage :
- -100V
- Max Junction Temperature (Tj) :
- 150°C
- Nominal Vgs :
- -4 V
- Width :
- 6.22mm
- Mount :
- Surface Mount
- Series :
- HEXFET®
- JEDEC-95 Code :
- TO-252AA
- Lead Free :
- Contains Lead, Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 205m Ω @ 7.8A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 205mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Current Rating :
- -13A
- Recovery Time :
- 190 ns
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -100V
- Contact Plating :
- Tin
- Rise Time :
- 58ns
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 52A
- Transistor Element Material :
- SILICON
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds :
- 760pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRFR5410TRPBF

P-Channel Tape & Reel (TR) 205m Ω @ 7.8A, 10V ±20V 760pF @ 25V 58nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5410TRPBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to deliver incredibly low on-resista nee per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The D-Pak is made to be surface mounted using wave soldering, vapor phase, or infrared technologies. For through-hole mounting applications, use the straight lead version (IRFU series). In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFR5410TRPBF Features
?Extremely Low On-Resistant
?P-ChannelX
Mount Surface (IRFR5410)
Direct Lead (IRFU5410)
Process technology, advanced
? Quick Switching
?Fully Rated for Avalanches
?Lead-Free
IRFR5410TRPBF Applications
Switching applications
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