IRFR4620TRLPBF
- Mfr.Part #
- IRFR4620TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 24A DPAK
- Stock
- 161,536
- In Stock :
- 161,536
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-252AA
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 78mOhm
- Width :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 50V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Turn On Delay Time :
- 13.4 ns
- Power Dissipation-Max :
- 144W Tc
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2009
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 24A
- Element Configuration :
- Single
- Series :
- HEXFET®
- Power Dissipation :
- 144W
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 15A, 10V
- Transistor Element Material :
- SILICON
- Length :
- 10.3886mm
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 25.4 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 14.8 ns
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 200V
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 22.4ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 2.52mm
- Max Junction Temperature (Tj) :
- 175°C
- Case Connection :
- DRAIN
- Datasheets
- IRFR4620TRLPBF

N-Channel Tape & Reel (TR) 78m Ω @ 15A, 10V ±20V 1710pF @ 50V 38nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR4620TRLPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to provide the lowest on-resistance per silicon area achievable. When HEXFET Power MOSFETs' fast switching speed and ruggedized device architecture are coupled, the designer has a highly efficient device that may be used in a variety of applications.
IRFR4620TRLPBF Features
-
Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
-
Avalanche SOA and fully characterized capacitance
-
Lead-free body diode with improved dV/dt and dI/dt capability
IRFR4620TRLPBF Applications
-
Synchronous Rectification with High Efficiency in SMPS
-
Uninterruptible Power Supply (UPS) is a type of power supply that is
-
Power Switching at High Speed
-
Circuits with hard switches and high frequencies
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