IRFR4620PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Published :

2009

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Element Configuration :

Single

Contact Plating :

Tin

Nominal Vgs :

5 V

Resistance :

78mOhm

Lead Free :

Lead Free

Power Dissipation :

144W

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Vgs (Max) :

±20V

Rise Time :

22.4ns

Drain to Source Breakdown Voltage :

200V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.73mm

REACH SVHC :

No SVHC

Power Dissipation-Max :

144W Tc

Series :

HEXFET®

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Factory Lead Time :

19 Weeks

Fall Time (Typ) :

14.8 ns

Dual Supply Voltage :

200V

Vgs(th) (Max) @ Id :

5V @ 100µA

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

25.4 ns

Height :

2.3876mm

Continuous Drain Current (ID) :

24A

FET Type :

N-Channel

Width :

6.22mm

Threshold Voltage :

5V

Number of Elements :

1

Radiation Hardening :

No

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

13.4 ns

Rds On (Max) @ Id, Vgs :

78m Ω @ 15A, 10V