IRFR4615TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

5V @ 100µA

Published :

2004

Max Junction Temperature (Tj) :

175°C

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

260

Rise Time :

35ns

Number of Pins :

3

Case Connection :

DRAIN

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

20 ns

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Length :

6.7056mm

Lead Free :

Lead Free

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

144W

Drain-source On Resistance-Max :

0.042Ohm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Turn On Delay Time :

15 ns

Number of Channels :

1

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

5V

Power Dissipation-Max :

144W Tc

Turn-Off Delay Time :

25 ns

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

33A

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Drain to Source Breakdown Voltage :

150V

Height :

2.52mm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Nominal Vgs :

5 V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63