IRFR4615PBF
- Mfr.Part #
- IRFR4615PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A DPAK
- Stock
- 920,457
- In Stock :
- 920,457
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 5 V
- Turn On Delay Time :
- 15 ns
- Power Dissipation :
- 144W
- Height :
- 1.778mm
- Power Dissipation-Max :
- 144W Tc
- Continuous Drain Current (ID) :
- 33A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 35ns
- Fall Time (Typ) :
- 20 ns
- Length :
- 6.7056mm
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 25 ns
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 5V
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 150V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 50V
- Vgs (Max) :
- ±20V
- Resistance :
- 42mOhm
- Number of Elements :
- 1
- Packaging :
- Tube
- Width :
- 6.22mm
- Mount :
- Surface Mount
- Dual Supply Voltage :
- 150V
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 21A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IRFR4615PBF

N-Channel Tube 42m Ω @ 21A, 10V ±20V 1750pF @ 50V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR4615PBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to provide the lowest on-resistance per silicon area achievable. When the designer uses HEXFET Power MOSFETs' high switching speed and ruggedized device architecture, the result is an exceptionally efficient device that may be employed in a number of applications.
IRFR4615PBF Features
-
Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
-
Avalanche SOA and fully characterized capacitance
-
Enhanced dV/dt and dI/dt capability of body diodes
-
Lead-Free
IRFR4615PBF Applications
-
Synchronous Rectification with High Efficiency in SMPS
-
Uninterruptible Power Supply (UPS) is a type of power supply that is
-
Power Switching at High Speed
-
Circuits with hard switches and high frequencies
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