IRFR4510PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

56A

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 100µA

Number of Terminations :

2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 38A, 10V

Mounting Type :

Surface Mount

Element Configuration :

Single

Rise Time :

42ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

JEDEC-95 Code :

TO-252AA

Height :

2.39mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

143W Tc

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

252A

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3031pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Series :

HEXFET®

Case Connection :

DRAIN

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

42 ns

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

34 ns

Published :

2012

Length :

6.73mm

Power Dissipation :

143W

Vgs (Max) :

±20V

JESD-609 Code :

e3

FET Type :

N-Channel

Packaging :

Tube

Nominal Vgs :

3 V

Width :

6.22mm

Turn On Delay Time :

18 ns

Threshold Voltage :

3V