IRFR4104TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Number of Pins :

3

Voltage - Rated DC :

40V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Current Rating :

42A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

6.22mm

Continuous Drain Current (ID) :

42A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

17 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

6.7056mm

Element Configuration :

Single

FET Type :

N-Channel

Turn-Off Delay Time :

37 ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Height :

1.778mm

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

69ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Published :

2003

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation-Max :

140W Tc

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Factory Lead Time :

12 Weeks

Resistance :

5.5mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Fall Time (Typ) :

36 ns

Operating Temperature :

-55°C~175°C TJ

Recovery Time :

42 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation :

140W