IRFR3910PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain-source On Resistance-Max :

0.115Ohm

JEDEC-95 Code :

TO-252AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

150 mJ

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

79W Tc

DS Breakdown Voltage-Min :

100V

Number of Terminations :

2

Series :

HEXFET®

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

115m Ω @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

16A

Vgs (Max) :

±20V

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Pulsed Drain Current-Max (IDM) :

60A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Published :

1998

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes