IRFR3711TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Turn-Off Delay Time :

17 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Length :

6.7056mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

14 Weeks

Turn On Delay Time :

12 ns

Number of Elements :

1

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Height :

2.3876mm

Resistance :

6.5mOhm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position :

Single

Current Rating :

100A

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Avalanche Energy Rating (Eas) :

460 mJ

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Rise Time :

220ns

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Published :

2005

Continuous Drain Current (ID) :

110A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

120W

Power Dissipation-Max :

2.5W Ta 120W Tc

Voltage - Rated DC :

20V

Radiation Hardening :

No

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

440A

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Width :

6.22mm