IRFR3711TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0065ohm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Drain Current-Max (Abs) (ID) :

30A

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-252AA

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Current-Max (IDM) :

440A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

100A Tc

ECCN Code :

EAR99

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta 120W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2004

Avalanche Energy Rating (Eas) :

460 mJ

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

1

Number of Terminations :

2

Terminal Position :

Single

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260