IRFR3711PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Width :

6.22mm

Drain to Source Breakdown Voltage :

20V

Pulsed Drain Current-Max (IDM) :

440A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Published :

2004

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.5W Ta 120W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

3 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

110A

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Height :

2.3876mm

Number of Terminations :

2

Current Rating :

110A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Length :

6.7056mm

Voltage - Rated DC :

20V

Drain-source On Resistance-Max :

0.0065ohm

Power Dissipation :

120W

Number of Pins :

3

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Lead Free :

Lead Free

Turn On Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Turn-Off Delay Time :

17 ns

Avalanche Energy Rating (Eas) :

460 mJ

Rise Time :

220ns

JEDEC-95 Code :

TO-252AA