IRFR3711

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

460 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2004

Series :

HEXFET®

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

2.5W Ta 120W Tc

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tube

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0065ohm

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

440A

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

30A

Number of Terminations :

2

FET Type :

N-Channel